tea1202ts NXP Semiconductors, tea1202ts Datasheet - Page 5

• Manufacturer Part Number: tea1202ts
• Description: Battery Power Unit
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Note
1. The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When
2002 Mar 14
Low drop-out voltage regulators
V
V
I
R
General characteristics
V
LDO
SYMBOL
LDO
dropout
ref
DSon(LDO1)
0.95 V starting power unit
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level
is measured at pin UPOUT/DNIN.
output voltage range
drop-out voltage
output current
LDO1 drain-to-source on-state
resistance
reference voltage
PARAMETER
V
I
in regulation
V
I
LDO
LDO1
LDO
I(LDO1)
5
= 50 mA
< V
= 50 mA
CONDITIONS
= 5 V; V
4
+ 0.3 V
FB1
< 0.4 V;
1.30
1.165
MIN.
Preliminary specification
30
500
1.190
TYP.
TEA1202TS
5.50
45
250
750
1.215
MAX.
V
mV
mA
m
V
UNIT