fdms869007 Fairchild Semiconductor, fdms869007 Datasheet
fdms869007
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fdms869007 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS8690 FDMS8690 ©2007 Fairchild Semiconductor Corporation FDMS8690 Rev.C2 ® MOSFET General Description = 14.0A This device has been designed specifically to improve the D efficiency of DC/DC converters. Using new techniques in = 11.5A ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
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Typical Characteristics 100 V = 10V 4. 0.0 0.5 1.0 1 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1.6 µ PULSE DURATION = 80 S DUTY ...
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Typical Characteristics 14A ,GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 1E-3 0.01 0 TIME IN AVALANCHE(ms) AV ...
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Typical Characteristics 2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 1E-3 5E FDMS8690 Rev. 25°C unless otherwise noted ...
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FDMS8690 Rev.C2 6 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ ...