fdms2502sdc Fairchild Semiconductor, fdms2502sdc Datasheet
fdms2502sdc
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fdms2502sdc Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 2502S FDMS2502SDC ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev.C TM ® PowerTrench SyncFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...
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... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev 25°C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C D ...
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... As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ≤ di/dt ≤ 200 A/μs, V ≤ Starting DSS ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper ...
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... DUTY CYCLE = 0.5% MAX 160 120 T = 125 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev °C unless otherwise noted J μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 1.5 2 100 125 150 C ) ...
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... J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev °C unless otherwise noted J 10000 100 300 250 200 100 C J 150 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec ...
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... TIME (ns) Figure 14. FDMS2502SDC SyncFET body diode reverse recovery characteristic ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. 0.01 0.001 μ ...
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... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS2502SDC Rev.C 8 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS2502SDC Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...