fdc699p-f077 Fairchild Semiconductor, fdc699p-f077 Datasheet - Page 5

• Manufacturer Part Number: fdc699p-f077
• Description: Fdc699p P-channel 2.5v Powertrench? Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.1
0
Figure 7. Gate Charge Characteristics.
I
0.001
D
0.01
= -7A
R
0.1
0.00001
SINGLE PULSE
DS(ON)
R
1
θJA
V
T
GS
A
5
= 111
= 25
LIMIT
= -4.5V
D = 0.5
-V
o
o
0.2
C/W
C
0.1
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
10
Q
1
g
, GATE CHARGE (nC)
0.0001
DC
10s
1s
15
100ms
SINGLE PULSE
Figure 11. Transient Thermal Response Curve.
V
10ms
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= -5V
0.001
1ms
20
10
100µs
-15V
10µs
25
-10V
0.01
100
30
0.1
4000
3500
3000
2500
2000
1500
1000
500
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
rss
0.01
C
1
oss
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
ISS
t
1
, TIME (sec)
10
10
1
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
θJA
- T
10
(t) = r(t) * R
A
= 111 °C/W
t
1
= P * R
100
t
2
SINGLE PULSE
R
15
θJA
T
A
FDC699P Rev C2 (W)
= 111°C/W
100
V
f = 1MHz
= 25°C
θJA
GS
θJA
1
= 0 V
(t)
/ t
2
1000
1000
20