hn58v256a Renesas Electronics Corporation., hn58v256a Datasheet - Page 17

• Manufacturer Part Number: hn58v256a
• Description: Memory>eeprom>parallel Eeprom
• Manufacturer: Renesas Electronics Corporation.

HN58V256A Series, HN58V257A Series
WE
WE, CE
WE
WE
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising
edge of WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 10
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns
or less.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
Rev.5.00, Nov. 17.2003, page 17 of 22
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the
control pins.
CE Pin Operation
CE
CE
5
cycles in case of the page programming and 10
4
cycles.
WE
CE
OE
20 ns max
4
cycles in case of the byte programming
V
0 V
V
0 V
IH
IH