hn58v256a Renesas Electronics Corporation., hn58v256a Datasheet - Page 4

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hn58v256a

Manufacturer Part Number
hn58v256a
Description
Memory>eeprom>parallel Eeprom
Manufacturer
Renesas Electronics Corporation.
Datasheet
HN58V256A Series, HN58V257A Series
Operation Table
Operation
Read
Standby
Write
Deselect
Write inhibit
Data polling
Program reset
Notes: 1. Refer to the recommended DC operating condition.
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
Input voltage relative to V
Operating temperature range*
Storage temperature range
Notes: 1. Vin min = 3.0 V for pulse width
Recommended DC Operating Conditions
Parameter
Supply voltage
Input voltage
Operating temperature
Notes: 1. V
Rev.5.00, Nov. 17.2003, page 4 of 22
2.
3. This function is supported by only the HN58V267A series.
2. Including electrical characteristics and data retention
3. Should not exceed V
2. V
3. V
4. This function is supported by only the HN58V257A series.
: Don’t care
IL
IH
IH
min:
min for V
max: V
CE
CE
V
V
V
V
V
CE
CE
1.0 V for pulse width
CC
IL
IH
IL
IL
IL
CC
+ 1.0 V for pulse width
SS
= 3.6 to 5.5 V is 2.4 V.
SS
2
CC
OE
OE
V
V
V
V
V
OE
OE
+ 1.0 V.
*
IL
IH
IH
IL
IL
2
50 ns.
50 ns
WE
WE
WE
WE
V
V
V
V
V
IH
IL
IH
IH
IH
Symbol
V
V
V
V
V
Topr
50 ns.
Symbol
V
Vin
Topr
Tstg
CC
SS
IL
IH
H
CC
*
4
RES
RES
RES
RES*
V
V
V
V
V
H
H
H
H
IL
*
1
Min
2.7
0
1.9*
V
0
0.3*
CC
3
Value
0 to +70
0.6 to +7.0
0.5*
55 to +125
2
0.5
1
1
RDY/Busy
High-Z
High-Z
High-Z to V
High-Z
V
High-Z
to +7.0*
OL
Typ
3.0
0
Busy
Busy
Busy*
3
OL
3
Max
5.5
0
0.6
V
V
+70
CC
CC
I/O
Dout
High-Z
Din
High-Z
Data out (I/O7)
High-Z
+ 0.3*
+ 1.0
Unit
V
V
C
C
3
Unit
V
V
V
V
V
C

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