hn58v256a Renesas Electronics Corporation., hn58v256a Datasheet - Page 23
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hn58v256a
Manufacturer Part Number
hn58v256a
Description
Memory>eeprom>parallel Eeprom
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN58V256A.pdf
(25 pages)
Revision History
Rev. Date
0.0
0.1
1.0
Mar. 15. 1995
Aug. 7. 1995
Apr. 12. 1995
Contents of Modification
Page
4
4
2
3
3
4
4
5
6
Description
Initial issue
Determination of package type:
Deletion of HN58V256AP series (DP-28)
Deletion of HN58V256AFPI-12/15
Deletion of HN58V256AT-12SR/15SR
Deletion of HN58V257AT-12SR/15SR
Absolute Maximum Rating
Recommended DC Operating Conditions
Change of format
Operating Information
Pin Description
Block Diagram
Mode Selection
Absolute Maximum Ratings
Recommended DC operating Condition
DC Characteristics
AC Characteristics
HN58V256AT series (TFP-28DB)
Deletion of Device Group
Deletion of Operating temperature range
Deletion of Device Group
Deletion of Operating temperature range
Deletion of note 4
Change order of notes
Deletion of HN58V256A-15 and HN58V257A-15
Deletion of note 1
Deletion of Compatible type No.
Deletion of Operating temperature range
Addition of note 1
Addition of note 1
Addition of note 3
Addition of note 4
V
Addition of note 4
I
Test condition: Input pulse levels: 0 V to 3.0 V to
0.4 V to 2.4 V(V
Addition of note 2
Read Timing Waveform: Addition of note 1
Write Cycle: t
Addition of note 4, 5
Byte Write Timing Waveform (1) and (2): Addition of note 1
Page Write Timing Waveform (1) and (2): Addition of note 2
CC3
20/ /85 C and 40/ /85 C
IH
20 to + 85 C and
(min) 2.4 V to 1.9 V
(max): 8/12/20/30 mA to 8/12/15/30 mA
HN58V256A/HN58V257A Series Data Sheet
DS
CC
(min): 50 ns to 70 ns
3.6 V), 0.4 V to 3.0 V(V
40 to +85 C
CC
> 3.6V)