hn58v256a Renesas Electronics Corporation., hn58v256a Datasheet - Page 6
hn58v256a
Manufacturer Part Number
hn58v256a
Description
Memory>eeprom>parallel Eeprom
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN58V256A.pdf
(25 pages)
HN58V256A Series, HN58V257A Series
AC Characteristics
Test Conditions
Read Cycle
Parameter
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*
RES low to output float*
RES to output delay*
Rev.5.00, Nov. 17.2003, page 6 of 22
Input pulse levels:
Input rise and fall time:
Input timing reference levels: 0.8, 1.8 V
Output load: 1TTL Gate +100 pF
Output reference levels: 1.5 V, 1.5 V
2
1, 2
(Ta = 0 to +70 C, V
0.4 V to 2.4 V (V
1
5 ns
Symbol
t
t
t
t
t
t
t
ACC
CE
OE
OH
DF
DFR
RR
HN58V256A/HN58V257A
-12
Min
10
0
0
0
0
CC
CC
= 2.7 to 5.5 V)
3.6V), 0.4V to 3.0 V (V
Max
120
120
60
40
350
600
Unit
ns
ns
ns
ns
ns
ns
ns
CC
3.6 V), 0 V to V
Test conditions
CE = OE = V
OE = V
CE = V
CE = OE = V
CE = V
CE = OE = V
CE = OE = V
IL
IL
IL
, WE = V
, WE = V
, WE = V
CC
IL
IL
IL
IL
, WE = V
, WE = V
, WE = V
, WE = V
(RES pin*
IH
IH
IH
IH
IH
IH
IH
2
)