hufa75617d3 Fairchild Semiconductor, hufa75617d3 Datasheet - Page 4

• Manufacturer Part Number: hufa75617d3
• Description: 16a, 100v, 0.090 Ohm, N-channel, Ultrafet Power Mosfets
• Manufacturer: Fairchild Semiconductor

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
200
100
30
25
20
15
10
0.1
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
10
3.0
2.5
2.0
1.5
1.0
0.5
5
0
1
2
-80
1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
FIGURE 7. TRANSFER CHARACTERISTICS
DD
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
= 15V
RESISTANCE vs JUNCTION TEMPERATURE
-40
V
V
DS
GS
T
J
3
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
DS(ON)
T
J
40
= 175
10
4
o
C
80
T
J
= 25
V
GS
(Continued)
120
o
T
T
SINGLE PULSE
= 10V, I
C
T
J
C
o
5
J
C)
= MAX RATED
= 25
= -55
160
o
D
100
C
o
= 16A
C
100 s
10ms
1ms
200
200
6
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
10
30
25
20
15
10
1
0.001
1.2
1.0
0.8
0.6
5
0
-80
0
FIGURE 8. SATURATION CHARACTERISTICS
If R = 0
t
If R
t
AV
AV
STARTING T
= (L)(I
= (L/R)ln[(I
V
CAPABILITY
JUNCTION TEMPERATURE
V
0
GS
-40
GS
= 10V
V
AS
= 6V
0.01
T
DS
J
)/(1.3*RATED BV
t
1
, JUNCTION TEMPERATURE (
AV
, DRAIN TO SOURCE VOLTAGE (V)
AS
0
J
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
= 150
o
40
C
0.1
STARTING T
2
DSS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
80
C
- V
V
= 25
GS
DD
DSS
= V
)
o
120
J
C
- V
DS
= 25
HUFA75617D3 Rev. B
o
DD
1
3
C)
V
, I
GS
) +1]
o
D
C
160
= 250 A
= 5V
200
10
4