hufa76407dk8 Fairchild Semiconductor, hufa76407dk8 Datasheet - Page 9

• Manufacturer Part Number: hufa76407dk8
• Description: 3.5a, 60v, 0.105 Ohm, Dual N-channel, Logic Level Ultrafet Power Mosfet
• Manufacturer: Fairchild Semiconductor

PSPICE Electrical Model
.SUBCKT HUFA76407DK8 2 1 3 ;
CA 12 8 4.55e-10
CB 15 14 5.20e-10
CIN 6 8 3.11e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 67.8
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.5e-9
LSOURCE 3 7 4.86e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.00e-2
RGATE 9 20 3.37
RLDRAIN 2 5 10
RLGATE 1 9 15
RLSOURCE 3 7 4.86
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.80e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*105),2))}
.MODEL DBODYMOD D (IS = 3.17e-13 RS = 2.21e-2 TRS1 = 6.25e-4 TRS2 = -1.11e-6 CJO = 6.82e-10 TT = 7.98e-8 M = 0.65)
.MODEL DBREAKMOD D (RS = 3.36e- 1TRS1 = 1.25e- 4TRS2 = 1.34e-6)
.MODEL DPLCAPMOD D (CJO = 2.91e-1 0IS = 1e-3 0 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 2.00 KP = 1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37)
.MODEL MSTROMOD NMOS (VTO = 2.33 KP = 19 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.71 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.06e- 3TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5)
.MODEL RSLCMOD RES (TC1 = 1.0e-3 TC2 = 1.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.11e- 3TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.0 VOFF= -2.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -7.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
1
RLGATE
LGATE
REV 28 May 1999
9
RGATE
CA
12
20
+
EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
MSTRO
+
-
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
HUFA76407DK8 Rev. B
SOURCE
DRAIN
2
3