hufa76504dk8 Fairchild Semiconductor, hufa76504dk8 Datasheet - Page 4

• Manufacturer Part Number: hufa76504dk8
• Description: 2.3a, 80v, 0.222 Ohm, Dual N-channel, Logic Level Ultrafet Power Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
10
8
6
4
2
0
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
200
100
0.1
10
1
2.0
350
300
250
200
150
1
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
T
FIGURE 7. TRANSFER CHARACTERISTICS
SINGLE PULSE
T
T
DD
J
R
J
A
I
D
= 150
= MAX RATED
= 25
JA
= 15V
T
= 1.1A
VOLTAGE AND DRAIN CURRENT
J
= 228
= 25
2.5
o
o
V
C
V
C
GS
DS
V
o
I
o
GS
D
C
, GATE TO SOURCE VOLTAGE (V)
C/W
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
= 2.5A
4
, GATE TO SOURCE VOLTAGE (V)
3.0
10
T
J
6
= -55
3.5
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
o
C
(Continued)
8
4.0
100
100 s
1ms
10ms
200
4.5
10
NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
10
8
6
4
2
0
10
20
1
2.5
2.0
1.5
1.0
0.5
0.01
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
-80
FIGURE 8. SATURATION CHARACTERISTICS
T
If R = 0
t
If R
t
AV
AV
STARTING T
A
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
STARTING T
= 25
= (L)(I
= (L/R)ln[(I
V
CAPABILITY
RESISTANCE vs JUNCTION TEMPERATURE
0
GS
o
C
-40
V
AS
= 10V
DS
T
)/(1.3*RATED BV
J
J
, DRAIN TO SOURCE VOLTAGE (V)
t
AS
, JUNCTION TEMPERATURE (
AV
= 150
J
*R)/(1.3*RATED BV
= 150
, TIME IN AVALANCHE (ms)
1
0
o
C
o
C
0.1
40
DSS
- V
V
DSS
GS
DD
STARTING T
80
2
)
= 10V, I
- V
DD
V
V
o
V
GS
GS
C)
) +1]
GS
D
120
Rev. A, June 4, 2001
= 3.5V
= 4.5V
= 2.5A
J
= 3V
= 25
o
C
160
1
3