huf75945p3 Fairchild Semiconductor, huf75945p3 Datasheet - Page 7

• Manufacturer Part Number: huf75945p3
• Description: 38a, 200v, 0.071 Ohm, N-channel, Ultrafet Power Mosfets
• Manufacturer: Fairchild Semiconductor

PSPICE Electrical Model
.SUBCKT HUF75945 2 1 3 ;
CA 12 8 6.6e-9
CB 15 14 6.5e-9
CIN 6 8 3.80e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 221
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 8.05e-9
LSOURCE 3 7 5.8e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 5.0e-2
RGATE 9 20 0.77
RLDRAIN 2 5 10
RLGATE 1 9 80.5
RLSOURCE 3 7 58
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.8e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*100),2.5))}
.MODEL DBODYMOD D (IS = 2.8e-12 RS = 3.0e-3 XTI = 5.5 TRS1 = 3.5e-3 TRS2 = 1e-5 CJO = 2.55e-9 TT = 1.52e-7 M = 0.42)
.MODEL DBREAKMOD D (RS = 1.2e- 0TRS1 = 1e- 3TRS2 = 1e-6)
.MODEL DPLCAPMOD D (CJO = 4.6e- 9IS = 1e-30 N = 10 M = 0.9)
.MODEL MMEDMOD NMOS (VTO = 3.05 KP = 2.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.77)
.MODEL MSTROMOD NMOS (VTO = 3.55 KP = 100 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.69 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.70 )
.MODEL RBREAKMOD RES (TC1 =1.27e- 3TC2 = 1.0e-6)
.MODEL RDRAINMOD RES (TC1 = 9.90e-3 TC2 = 3.60e-5)
.MODEL RSLCMOD RES (TC1 = 3.0e-3 TC2 = 1.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.90e-3 TC2 = -1.10e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.80e- 3TC2 = 1.70e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.5 VOFF= -4.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.5 VOFF= -5.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.3 VOFF= 0.4)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.4 VOFF= -0.3)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
1
rev 13 October 2000
RLGATE
LGATE
9
RGATE
CA
12
20
+
EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
MSTRO
+
-
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
RVTHRES
RBREAK
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3