s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 137

• Manufacturer Part Number: s71jl064ha0bfw62
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
• Manufacturer: Advanced Micro Devices

AC Characteristics
Note: CE1#≤VCC-0.2V. CS2≤VCC-0.2V (CE1# controlled) or CS2≤0.2V (CS2 controlled), BYTE#=V
February 25, 2004 S71JLxxxHxx_00A1
Data retention set-up time
Data retention current
V
CC
Read/Write Charcteristics (V
Data Retention Characteristics
Recovery time
for data retention
Item
UB#, LB# disable to high-Z output
UB#, LB# enable to low-Z output
Output hold from address change
Output disable to high-Z output
UB#, LB# Valid to End of Write
Output enable to low-Z output
Output enable to valid output
Chip disable to high-Z output
Address valid to end of write
Chip select to low-Z output
Chip select to end of write
Data to write time overlap
Data hold from write time
End write to output low-Z
UB#, LB# Access Time
Write to output high-Z
Chip select to output
Address access time
Address set-up time
Write recovery time
Write pulse width
Write cycle time
Read cycle time
Parameter List
Symbol
P r e l i m i n a r y
t
t
V
I
SDR
RDR
DR
DR
CC
8 Mb SRAM (supplier 1)
See data retention waveform
=2.7-3.3V)
V
CC
=3.0V, CS1#≥V
CS1#≥V
Test Condition
CC
-0.2V
t
t
t
CO1
HZ1
CC
LZ1
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
-0.2V
t
t
OHZ
t
OLZ
BHZ
BLZ
WC
CW
AW
BW
WR
DW
OW
OH
WP
DH
RC
AA
, t
OE
BA
, t
, t
AS
CO2
LZ2
HZ2
Min
1.5
t
RC
0
-
Min
70
10
10
10
70
60
60
60
50
30
5
0
0
0
0
0
0
0
5
-
-
-
-
Typ
-
-
-
-
SS
Max
70
70
35
70
25
25
25
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
or V
Max
3.3
15
-
-
CC
Units
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µA
ns
V
125