s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 138
s71jl064ha0bfw62
Manufacturer Part Number
s71jl064ha0bfw62
Description
Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
Manufacturer
Advanced Micro Devices
Datasheet
1.S71JL064HA0BFW62.pdf
(141 pages)
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Notes:
1.
2.
126
Figure 62. Timing Waveform of Write Cycle(1) (WE# controlled, if BYTE# is low, ignore UB#/LB# timing)
Figure 60. Timing Waveform of Read Cycle(1) (address controlled, CD#1=OE#=V
t
At any given temperature and voltage condition,
interconnection.
HZ and
Figure 61. Timing Waveform of Read Cycle(2) (WE#=V
Timing Diagrams
UB#, LB#
Address
Data Out
t
Data out
OHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
UB#, LB#
Address
Data out
Address
Data in
CS1#
OE#
CS1#
CS2
WE#
CS2
Previous Data Valid
High-Z
Data Undefined
High-Z
t
HZ (Max.) is less than
t AS(3)
t LZ
t BLZ
8 Mb SRAM (supplier 1)
t OH
t OLZ
and/or LB#=V
t AA
t CO1
t CO2
t BA
t OE
P r e l i m i n a r y
t WHZ
t AA
t AW
t WC
t CW(2)
t
t RC
t BW
t WP(1)
LZ (Min.) both for a given device and from device to device
t RC
IL
IH
)
, if BYTE# is low, ignore UB#/LB# timing)
t DW
Data Valid
Data Valid
t WR(4)
t DH
Data Valid
t OW
IL
t OHZ
t OH
t BHZ
S71JLxxxHxx_00A1 February 25, 2004
, CS2=WE#=V
t HZ
High-Z
IH
, UB#
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