s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 90

• Manufacturer Part Number: s71jl064ha0bfw62
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
• Manufacturer: Advanced Micro Devices

DC Characteristics
Notes:
1. T
2. Overshoot: Vcc+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Note: Capacitance is sampled, not 100% tested
Note: Typical values are measured at V
90
Average operating current
Input high voltage
Standby Current (CMOS)
Input low voltage
Output leakage current
Supply voltage
Input leakage current
Output high voltage
Input/Output capacitance
Output low voltage
A
Ground
= -40 to 85
Input capacitance
Item
Recommended DC Operating Conditions (Note 1)
Capacitance (f=1MHz, T
DC Operating Characteristics
Item
Item
°
C, otherwise specified.
Symbol
Symbol
V
V
V
V
CC
SS
I
I
V
I
IH
V
IL
I
I
CC1
CC2
SB1
LO
OH
OL
LI
1. CE1#≥V
Cycle time=1µs, 100% duty, I
Symbol
CE1#=V
Cycle time=Min, I
A
CC
CE1#=V
C
C
LB#≤0.2V and/or UB#≤0.2V, CS2≥V
=25°C)
IN
IO
=2.0V, T
-0.2 (Note 3)
CC
UB#=V
2. 0V≥CS2≤0.2V (CS2 controlled)
IH
LB#=UB#=V
16 Mb SRAM (supplier 1)
Min
2.7
2.2
-0.2V, CS2≥V
IL
0
, CS2=V
, CS2=V
V
A
IN
=25
Other input = 0-V
≤0.2V or V
IL
V
, V
Test Condition
Test Conditions
P r e l i m i n a r y
I
IN
I
°
OH
IO
IL
OL
C and not 100% tested.
IN
IH
=V
V
V
=0mA, 100% duty,
or OE#=V
=V
= -1.0mA
IN
IO
IH
, LB#=V
= 2.1mA
CC
SS
=0V
=0V
, V
IL
-0.2V (CE1# controlled) or
IN
to V
IO
or V
≥V
=V
IO
CC
CC
Typ
3.0
IL
=0mA, CE1#≤0.2V,
IH
0
-
-
SS
IH
-0.2V
CC
and/or
or WE#=V
to V
CC
CC
-0.2V,
Min
-
-
V
IL
CC
70ns
or
+0.2 (Note 2)
Max
3.3
0.6
0
Min
2.4
-1
-1
-
-
-
-
S71JLxxxHxx_00A1 February 25, 2004
Max
10
8
(Note)
-5.0
Typ
-
-
-
-
-
-
Max
0.4
30
25
Unit
1
1
5
-
V
V
V
V
Unit
pF
pF
Unit
mA
µA
µA
µA
µA
V
V