s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 139

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s71jl064ha0bfw62

Manufacturer Part Number
s71jl064ha0bfw62
Description
Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
Manufacturer
Advanced Micro Devices
Datasheet
Notes:
1. A write occurs during the overlap(t
2. t
3. t
4. t
February 25, 2004 S71JLxxxHxx_00A1
Figure 63. Timing Waveform of Write Cycle(2) (CE1# controlled, if BYTE# is low, ignore UB#/LB# timing)
goes low with asserting UB# or LB# for single byte operation or simultaneously asserting UB# and LB# for double
byte operation. A write ends at the earliest transition when CS1# goes high and WE# goes high. The t
measured from the beginning of write to the end of write.
going high.
CW
AS
WR
is measured from the address valid to the beginning of write.
is measured from the CS1# going low to the end of write.
is measured from the end of write to the address change. t
Figure 64. Timing Waveform of Write Cycle(3) (UB#, LB# controlled, BYTE# must be high)
UB#, LB#
UB#, LB#
Data out
Data out
Address
Address
Data in
Data in
CS1#
WE#
WE#
CS#
CS2
CS2
P r e l i m i n a r y
WP
High-Z
High-Z
) of low CS1# and low WE#. A write begins when CS1# goes low and WE#
t AS(3)
t AS(3)
8 Mb SRAM (supplier 1)
t AW
t CW(2)
t AW
t CW(2 )
t CW(2)
t WC
t WC
t BW
t BW
t WP(1)
t WP(1)
WR
applied in case a write ends as CS1# or WE#
t DW
t DW
Data Valid
Data Valid
t WR(4)
t WR(4)
t DH
t DH
High-Z
High-Z
WP
is
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