s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 91

• Manufacturer Part Number: s71jl064ha0bfw62
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
• Manufacturer: Advanced Micro Devices

AC Characteristics
Notes:
1. CE1#≤VCC-0.2, CS2≤VCC-0.2V (CE1# controlled) or 0≤CS2-0.2V (CS2 controlled)
2. Typical values are measured at T
February 25, 2004 S71JLxxxHxx_00A1
Data retention set-up time
Data retention current
V
CC
Read/Write Charcteristics (V
Data Retention Characteristics
Recovery time
for data retention
Item
UB#, LB# disable to high-Z output
LB#, UB# enable to low-Z output
Output hold from address change
LB#, UB# valid to data output
Output enable to low-Z output
LB#, UB# valid to end of write
Output enable to valid output
Chip disable to high-Z output
OE# disable to high-Z output
Address valid to end of write
Chip select to low-Z output
Chip select to end of write
Data to write time overlap
Data hold from write time
End write to output low-Z
Write to output high-Z
Chip select to output
Address access time
Address set-up time
Write recovery time
Write pulse width
Write cycle time
Read cycle time
Parameter List
A
Symbol
P r e l i m i n a r y
=26
t
t
V
I
SDR
RDR
DR
DR
°
C and not 100% tested.
CC
V
16 Mb SRAM (supplier 1)
CE1#≥V
CC
See data retention waveform
=2.7-3.3V)
=1.5V, CE1#≥V-0.2V (Note 1),
CC
Test Condition
-0.2V (Note 1), V
V
IN
≥0V
t
t
t
t
CW1
CO1
HZ1
LZ1
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
OHZ
t
OLZ
BHZ
BLZ
WC
AW
WR
DW
OW
BW
OH
WP
DH
RC
AA
, t
OE
BA
, t
, t
, t
AS
CO2
LZ2
HZ2
CW2
IN
≥0V
Min
1.5
t
RC
0
-
Min
70
10
10
10
70
60
60
50
30
60
5
0
0
0
0
0
0
0
5
-
-
-
-
(Note 2)
Typ
1.0
-
-
-
Max
70
70
35
70
25
25
25
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.3
15
-
-
Units
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µA
ns
V
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