kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 139
kfm2g16q2a-deb8
Manufacturer Part Number
kfm2g16q2a-deb8
Description
2gb Muxonenand A-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KFM2G16Q2A-DEB8.pdf
(173 pages)
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4.0 DC CHARACTERISTICS
4.1 Absolute Maximum Ratings
NOTE :
1) Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V@1.8V device).
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
4.2 Operating Conditions
Voltage reference to GND
NOTE :
1) Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq).
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
Recommended Operating Temperature
Maximum DC voltage may overshoot to Vcc+2.0V for periods <20ns.
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Parameter
Parameter
SS
V
V
CC-
CC-
Symbol
core / Vcc
IO / Vccq
V
Extended
Industrial
SS
All Pins
Vcc
T
T
- 139 -
A
A
(Extended Temp.)
(Industrial Temp.)
Min
1.7
0
Symbol
T
Vcc
T
V
I
bias
OS
stg
IN
KFM2G16Q2A
Typ.
1.8
0
-0.5 to + 2.45
-0.5 to + 2.45
-30 to +125
-40 to +125
-65 to +150
-30 to +85
-40 to +85
Rating
5
FLASH MEMORY
Max
1.95
0
Unit
mA
°C
°C
°C
V
Unit
V
V
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