kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 60

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

2.8.11 Start Address3 Register F102h (R/W)
This Read/Write register describes the NAND Flash destination block address which will be copy back programmed. Also, this register indi-
cates the block address for the first page to be read in Cache Read Operation.
F102h, default = 0000h
Start Address3 Information
2.8.12 Start Address4 Register F103h (R/W)
This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector address in a
page for copy back programming. Also, this register describes the first page and sector address to be loaded in Cache Read Operation.
F103h, default = 0000h
NOTE 1) In case of ‘Cache Read Operation’, FCSA has to be set to 00.
Start Address4 Information
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
15
15
Register Information
FCPA
FCSA
Item
14
14
Reserved(00000)
FCBA
Device
13
2Gb
13
Reserved(00000000)
12
12
NAND Flash Copy Back Sector Address &
NAND Flash Copy Back Page Address &
First Sector Address of Cache Read
11
First Page Address of Cache Read
11
10
10
Description
Block Address for the first page to be read in Cache Read Operation
9
9
Number of Block
8
2048
8
NAND Flash Copy Back Block Address &
- 60 -
7
7
6
Description
6
FCBA
Default Value
5
5
000000
FCPA
00
4
4
3
3
FLASH MEMORY
FCBA[10:0]
FBA
6 bits for 64 pages
2 bits for 4 sectors
000000 ~ 111111,
2
2
00 ~ 11,
Range
1
1
FCSA
1)
0
0