kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 155
kfm2g16q2a-deb8
Manufacturer Part Number
kfm2g16q2a-deb8
Description
2gb Muxonenand A-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KFM2G16Q2A-DEB8.pdf
(173 pages)
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6.12 Program Operation Timing
NOTE :
1) AA = Address of address register
2) “In progress” and “complete” refer to status register.
3) Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
A/DQ15
A/DQ0:
CA = Address of command register
PCD = Program Command
PMA = Address of memory to be programmed
BA = Address of BufferRAM to write the data
BD = Program Data
SA = Address of status register
AA* = Address of Start Address1 Register(for Flash Block Address)
PMB = DFS & FBA(Flash Block address) of memory to be programmed next time
AVD
CLK
RDY
WE
INT
OE
CE
bit
See AC Characteristics Tables 5.5, 5.7 and 5.9.
V
Hi-Z
IL
t
t
t
AVDP
AAVDS
CS
AA
t
CER
t
WPL
Program Command Sequence (last two cycles)
t
AAVDH
PMA
t
WC
t
t
WPH
WEA
BA
BD
CA
t
DS
PCD
t
CH
t
DH
- 155 -
t
CEZ
t
PGM1 or tPGM2
t
CER
SA
Progress
In
Read Status Data
SA
Completed
t
CEZ
FLASH MEMORY
AA
*
PMB
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