kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 91
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kfm2g16q2a-deb8
Manufacturer Part Number
kfm2g16q2a-deb8
Description
2gb Muxonenand A-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KFM2G16Q2A-DEB8.pdf
(173 pages)
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All Block Unlock Flow Diagram
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
NOTE 1) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
* *When there is a block lock-tight, all block unlock command will be fail.
* Samsung strongly recommends to follow the above flow chart
Add: F24Eh DQ[2:0]=US,LS,LTS
Read Write Protection Register
Write 0 to interrupt register
Add: F240h DQ[10]=0(pass)
Add: F24Ch DQ=SBA(000h)
Select DataRAM for DDP
Add: F241h DQ[15]=INT
Write ‘All Block Unlock’
Add: F241h DQ=0000h
Add: F101h DQ=DBS
Add: F100h DQ=DFS*
low to high transition
Write ‘DFS*, of Flash
Write ‘SBA’ of Flash
Wait for INT register
Unlock All Block
Read Controller
Status Register
Add: F220h
completed
DQ=0027h
Command
Start
- 91 -
1)
* DFS, DBS is for DDP
FLASH MEMORY
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