kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 169

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
7.1.3 Determining Rp Value (DDP, QDP only)
For general operation, INT operates as normal output pin, so that tF is equivalent to tR (below 10ns). But since INT operates as open drain
with 50K ohm for Reset (Cold/Hot/Warm/NAND Flash Core) operations and ‘2X program operation’ case at DDP option, the pull-up resistor
value is related to tr(INT). And appropriate value can be obtained with the following reference charts.
Vcc or Vccq
~50k ohm
Ibusy
tr[us]
tf[ns]
NOTE 1) Refer to chapter 2.8.10 Start Address Register F101h DDP Block Diagram
INT
0.1373
2.717
1.78
1K
1)
KFN4G16Q2A @ Vcc = 1.8V, Ta = 25°C , C
1.046
2.676
10K
0.18
INT pol = ‘High’
Rp
1.658
2.674
20K
0.09
Rp(ohm)
Ready Vcc
2.062
2.673
0.06
30K
- 169 -
(Default)
2.349
0.045
2.673
40K
tf
VOL
L
= 30pF
2.672
2.565
0.036
50K
Vss
Busy State
Open(100K)
3.145
0.018
FLASH MEMORY
tr
VOH