kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 5

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

1.4 Product Features
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Device Architecture
Device Performance
System Hardware
Packaging
• Reliable CMOS Floating-Gate Technology
• Design Technology:
• Supply Voltage:
• Host Interface:
• 5KB Internal BufferRAM:
• SLC NAND Array:
• Host Interface Type:
• Programmable Burst Read Latency:
• Multiple Sector Read/Write:
• Multiple Reset Modes:
• Multi Block Erase:
• Low Power Dissipation:
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (RP)
• Data Protection Modes
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
• Handshaking Feature
• Detailed chip information
• 2G products
• 4G DDP products
A die
1.8V (1.7V ~ 1.95V)
16 bit
1KB BootRAM, 4KB DataRAM
(2K+64)B Page Size, (128K+4K)B Block Size
Synchronous Burst Read
Synchronous Burst Block Read
Synchronous Write
Asynchronous Random Read
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Resets
up to 64 Blocks
Typical Power,
- Standby current : 10uA (Single)
- Synchronous Burst Read current(66MHz/83MHz, single) : 20/25mA
- Synchronous Burst Write current(66MHz/83MHz, single) : 20/25mA
- Load current : 30mA
- Program current : 25mA
- Erase current : 20mA
- Multi Block Erase current : 20mA
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA
- 5 -
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K words Sequential Burst
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with no-wrap
- Continuous (1K words) 64 Page Sequential Burst
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with wrap around
- Continuous 1K words Sequential Burst
- 76ns access time
1~40Mhz : Latency 3 available
1~66Mhz : Latency 4,5,6 and 7 available
Over 66Mhz : Latency 6,7 available.
FLASH MEMORY