sss2n60a Fairchild Semiconductor, sss2n60a Datasheet - Page 3

• Manufacturer Part Number: sss2n60a
• Description: Advanced Power Mosfet
• Manufacturer: Fairchild Semiconductor

POWER MOSFET
10
10
10
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
-1
-2
1 0
0
10
8
6
4
2
0
0
1 0
N-CHANNEL
0
-1
Fig 5. Capacitance vs. Drain-Source Voltage
0
Top :
Bottom : 4.5 V
Fig 3. On-Resistance vs. Drain Current
C
C
C
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1 0 V
V
1 5 V
iss
oss
rss
GS
1
Fig 1. Output Characteristics
V
V
DS
DS
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
2
, Drain Current [A]
10
0
@ Notes :
1. 250 s Pulse Test
2. T
V
C
C
C
GS
iss
oss
rss
C
3
= 25
= 1 0 V
= C
= C
= C
gs
ds
gd
1 0
o
V
+ C
+ C
C
1
GS
gd
gd
= 2 0 V
4
( C
@ N o t e : T
ds
10
@ N o t e s :
= s h o r t e d )
1
1 . V
2 . f = 1 M H z
GS
J
5
= 2 5
= 0 V
o
C
6
10
10
1 0
1 0
10
1 0
-1
-2
-1
-2
1 0
0
0
5
0
0 . 2
2
0
Fig 4. Source-Drain Diode Forward Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
25
150
o
C
o
C
Fig 2. Transfer Characteristics
1 5 0
0 . 4
3
o
V
V
C
SD
GS
Q
4
G
- 55
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
o
V
C
DS
V
0 . 6
DS
6
= 4 8 0 V
2 5
V
DS
= 3 0 0 V
SSS2N60A
o
C
= 1 2 0 V
6
@ Notes :
0 . 8
9
1. V
2. V
3. 250 s Pulse Test
@ N o t e s :
2 . 2 5 0 s P u l s e T e s t
1 . V
GS
DS
@ N o t e s : I
GS
= 0 V
= 50 V
= 0 V
8
1 . 0
1 2
D
= 2 . 0 A
1 . 2
10
1 5