tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet - Page 3

• Manufacturer Part Number: tpc8406-h
• Description: Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-Channel Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
(Ta = 25°C)
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
V
I
V
I
I
V
D
D
D
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
GS
= −10 mA, V
= −10 mA, V
= −6.5 A
= − 6.5 A
= − 6.5 A
3
= −6.5 A, V
(Ta = 25°C)
= ±16 V, V
= −40 V, V
= −10 V, I
= −4.5 V, I
= −10 V, I
= −10 V, I
= −10 V, V
−10 V
∼ − −32 V, V
∼ − −32 V, V
∼ − −32 V, V
0 V
Test Condition
Test Condition
w
V
DD
= 10 μs
D
D
D
GS
GS
D
GS
DS
GS
GS
GS
GS
GS
= −1 mA
= − 3.3 A
= − 3.3 A
⎯
= − 3.3 A
∼ − −20 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
=−10V
= −5 V
= −10 V
I
D
= −3.3 A
R
6.1 Ω
L
V
=
OUT
−0.8
Min
−40
−20
Min
6.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1190
Typ.
Typ.
170
250
3.2
8.1
9.7
29
24
13
12
12
43
27
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
TPC8406-H
2006-11-13
−2.0
Max
Max
±10
−10
−26
1.2
37
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V