tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet - Page 6

• Manufacturer Part Number: tpc8406-h
• Description: Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-Channel
10000
1000
100
2.0
1.6
1.2
0.8
0.4
50
40
30
20
10
10
−0.1
−80
0
0
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = −4.5 V
(1)
(2)
(3)
(4)
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
−10 V
50
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
ｔ＝10S
Capacitance – V
−1
0
R
DS (ON)
P
D
100
40
– Ta
I D = −6.5 A
– Ta
I D = −1.7/−3.3/−6.5A
−10
80
DS
DS
150
−3.3
°
(V)
C)
120
°
C)
C oss
C rss
C iss
−1.7
−100
200
160
6
−100
−0. 1
−2.0
−1.6
−10
−1.2
−0.8
−0.4
−50
−40
−30
−20
−10
−1
−80
0
0
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −1 mA
Pulse test
Common source
I D = −6.5 A
Ta = 25°C
Pulse test
V DS
−40
Drain-source voltage V
0.2
Ambient temperature Ta (
Total gate charge Q
10
Dynamic input/output
0.4
0
characteristics
−1
V GS
20
I
DR
V
−8
th
−16
−10
– V
0.6
40
– Ta
DS
V GS = 0 V
30
−4.5
0.8
80
g
V DD = −32 V
DS
−3
(nC)
TPC8406-H
40
°
(V)
120
C)
1.0
2006-11-13
160
50
1.2
−20
−16
−12
−8
−4
0