tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet - Page 4

• Manufacturer Part Number: tpc8406-h
• Description: Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-channel Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
(Ta = 25°C)
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
GS
= 10 mA, V
= 10 mA, V
4
= 6.5 A, V
(Ta = 25°C)
= ±16 V, V
= 40 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 32 V, V
∼ − 32 V, V
∼ − 32 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
V
D
GS
GS
D
GS
GS
GS
= 10 μs
GS
GS
GS
DD
= 1 mA
= 3.3 A
DS
= 3.3 A
= 3.3 A
⎯
= −20 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
=10V, I
= 5 V,I
= 10 V, I
∼ − 20 V
= 0 V
I
D
= 3.3 A
D
D
D
= 6.5A
R
= 6.5A
6.1 Ω
= 6.5A
L
V
OUT
=
Min
Min
1.1
40
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
Typ.
Typ.
650
240
6.2
2.1
2.7
3.5
27
22
14
55
18
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
9
2
TPC8406-H
2006-11-13
−1.2
Max
Max
±10
2.3
10
35
27
26
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V