tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet - Page 9

• Manufacturer Part Number: tpc8406-h
• Description: Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-Channel
10000
1000
100
2.0
1.6
1.2
0.8
0.4
10
50
40
30
20
10
−80
0
0.1
0
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = 4.5 V
(1)
(2)
(3)
(4)
−40
Drain-source voltage V
Ambient temperature Ta (°C)
10 V
Ambient temperature Ta (°C)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
ｔ＝10S
50
Capacitance – V
0
1
R
DS (ON)
P
D
100
40
– Ta
I D = 6.5 A
– Ta
I D = 1.7/3.3/6.5A
80
10
DS
DS
150
3.3
(V)
120
C oss
C rss
C iss
1.7
160
100
200
9
100
0.1
2.5
2.0
1.5
1.0
0.5
10
50
40
30
20
10
1
−80
0
0
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
I D = 6.5 A
Ta = 25°C
Pulse test
V DS
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
4
Dynamic input/output
−0.4
0
characteristics
V GS
1
I
8
DR
V
10
th
8
−0.6
– V
40
– Ta
4.5
DS
16
V GS = 0 V
12
−0.8
80
g
3
DS
V DD = 32 V
(nC)
16
TPC8406-H
(V)
−1.0
120
2006-11-13
−1.2
160
20
20
16
12
8
4
0