tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet - Page 8

• Manufacturer Part Number: tpc8406-h
• Description: Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-Channel
100
0.1
10
30
25
20
15
10
10
1
5
0
8
6
4
2
0
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
4.5
5
6
10
Drain-source voltage V
Gate-source voltage V
1
Ta = −55°C
0.2
100
Drain current I
2
25
1
4
3.8
0.4
⎪Y
I
I
D
D
25
fs
– V
– V
⎪ – I
Ta = −55°C
3
3.4
3.2
DS
GS
D
0.6
D
10
4
GS
DS
100
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.6 V
0.8
(V)
(V)
5
3.1
2.9
2.8
3
2.7
100
1.0
6
8
300
100
0.5
0.4
0.3
0.2
0.1
30
10
20
16
12
3
0
8
4
0
0.1
0
0
Common source
Ta = 25°C
Pulse test
4.5
5
6
10
Drain-source voltage V
Gate-source voltage V
2
0.4
Drain current I
4
1
R
4
V
DS (ON)
0.8
I
DS
D
– V
3.8
– V
6
V GS = 10 V
4.5 V
DS
3.6
GS
– I
1.2
D
D
10
8
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
V GS = 2.6 V
TPC8406-H
I D = 6.5 A
1.6
(V)
(V)
2006-11-13
10
3.3
1.7
3.4
3.2
2.8
3
12
2.0
100