fds4070n704 Fairchild Semiconductor, fds4070n704 Datasheet - Page 5
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fds4070n704
Manufacturer Part Number
fds4070n704
Description
N-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS4070N704.pdf
(8 pages)
Typical Characteristics
1000
10
0.01
100
8
6
4
2
0
0.1
0.001
10
Figure 9. Maximum Safe Operating Area.
1
0
0.01
0.01
Figure 7. Gate Charge Characteristics.
0.1
I
D
0.0001
1
R
= 15.3
SINGLE PULSE
DS(ON)
R
θ JA
V
T
GS
A
= 85
= 25
LIMIT
= 10V
10
D = 0.5
o
o
C/W
C
0.2
0.1
0.05
0.1
0.02
V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
0.001
20
SINGLE PULSE
1
DC
Figure 11. Transient Thermal Response Curve.
30
10s
V
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= 10V
1s
100ms
0.01
20V
10ms
10
40
1ms
30V
100µs
50
100
0.1
t
1
, TIME (sec)
4000
3000
2000
1000
50
40
30
20
10
0
Figure 8. Capacitance Characteristics.
0
0.01
0
1
C
Figure 10. Single Pulse Maximum
RSS
C
OSS
0.1
Power Dissipation.
V
DS
10
, DRAIN TO SOURCE VOLTAGE (V)
10
1
t
C
1
, TIME (sec)
ISS
20
P(pk)
Duty Cycle, D = t
10
T
R
J
R
θJA
- T
100
θJA
(t) = r(t) * R
A
t
1
= 85 °C/W
= P * R
t
SINGLE PULSE
2
30
R
FDS4070N7 Rev B2 (W)
θ JA
T
100
A
= 85°C/W
V
f = 1MHz
= 25°C
GS
θJA
1
θJA
= 0 V
(t)
/ t
2
1000
1000
40