fdd6690 Fairchild Semiconductor, fdd6690 Datasheet - Page 3

• Manufacturer Part Number: fdd6690
• Description: N-channel, Logic Level, Powertrenchtm Mosfet
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
S
rr
the drain pins. R
where P
SD
rr
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
D
is maximum power dissipation at T
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
Parameter
R
P
C
DS(ON)
D
a) R
= 25°C and R
1in
JA
CA
2
pad of 2 oz copper
= 45°C/W when mounted on a
is determined by the user's board design.
DS(on)
is at T
T
A
Scale 1 : 1 on letter size paper
= 25°C unless otherwise noted
I
F
J(max)
GS
= 12 A,
Test Conditions
= 0 V,
and V
GS
= 10V. Package current limitation is 21A
I
d
S
iF
= 2.3 A
/d
t
= 100 A/µs
(Note 2)
b) R
Min Typ Max Units
on a minimum pad.
JA
= 96°C/W when mounted
0.76
24
13
2.3
1.2
FDD6690A Rev. EW)
nS
nC
A
V