kh231 Fairchild Semiconductor, kh231 Datasheet - Page 2

• Manufacturer Part Number: kh231
• Description: Fast Settling, Wideband Buffer/amplifier Av = 1 To 5
• Manufacturer: Fairchild Semiconductor

DATA SHEET
KH231 Electrical Characteristics
2
PARAMETERS
Ambient Temperature
Ambient Temperature
FREQUENCY DOMAIN RESPONSE
¦
¦
¦
¦
TIME DOMAIN RESPONSE
NOISE AND DISTORTION RESPONSE
¦
¦
STATIC, DC PERFORMANCE
* input offset voltage
* input bias current
* input bias current
* power supply rejection ratio
* supply current
MISCELLANEOUS PERFORMANCE
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Absolute Maximum Ratings
V
I
common mode input voltage, V
differential input voltage
thermal resistance
junction temperature
operating temperature
storage temperature
lead temperature (soldering 10s)
note 1:
note 2:
o
CC
-3dB bandwidth (note 2)
large-signal bandwidth
gain flatness (note 2)
group delay
linear phase deviation
reverse isolation
rise and fall time
settling time to 0.05%
overshoot
slew rate (overdriven input)
overload recovery
2nd harmonic distortion
3rd harmonic distortion
equivalent input noise
common mode rejection ratio
non-inverting input resistance
non-inverting input capacitance
output impedance
output voltage range
peaking
peaking
rolloff
non-inverting
inverting
<50ns pulse, 200% overdrive
noise floor
integrated noise
average temperature coefficient
average temperature coefficient
average temperature coefficient
*
¦
¦
The output amplitude used in testing is 0.63V
is guaranteed for conditions listed.
AI/AK/AM/HXC/HXA 100% tested at +25°C
AK/AM/HXC/HXA
AI
to 0.1%
o
100% tested at +25°C and sample
tested at -55°C and +125°C
sample tested at +25°C
0dBm, 20MHz
0dBm, 20MHz
AK/AM: -55°C to +125°C
CONDITIONS
KH231AI
KH231AK/AM/HXC/HXA
V
V
V
0.1 to 50MHz
>50MHz
at 100MHz
to 100MHz
to 100MHz
2V step
10V step
5V step
2.5V step
5V step
<1% error
>5MHz
5MHz to 200MHz
non-inverting
inverting
no load
DC
@ 100MHz
no load
o
o
o
limits plot on page 3)
AI:
(see thermal model)
≤2V
≤10V
≤2V
-65°C to +150°C
(see V
pp
-25°C to +85°C
pp
pp
. Performance
(T
pp
A
cm
= +25°C, A
±100mA
+175°C
+300°C
and V
±20V
±3V
o
v
Recommended Operating Conditions
= +2V, V
V
I
common mode input voltage
gain range
note 3:
note 4:
o
3.5 ± 0.5
CC
+25°C
+25°C
5, 37
TYP
-153
165
120
125
400
±12
0.1
0.1
0.4
0.5
2.0
5.0
3.0
-55
-59
5.0
1.3
95
53
36
15
12
70
10
50
10
50
46
18
5
1
CC
In the noninverting configuration, care should be taken when
choosing R
currents of typically 5µA but as high as 24µA can create an
input signal large enough to cause overload. It is therefore
recommended that R
These ratings protect against damage to the input stage
caused by saturation of either the input or output stages at
lower supply voltages, and against exceeding transistor
collector-emitter breakdown ratings at high supply voltages.
V
Saturation is allowed to occur up to this calculated level of
V
input, pin 6.
out(max)
out
= ±15V, R
. V
-25°C
-55°C
<-150
>±11
>145
<100
<125
<200
>100
<-47
<-47
<0.6
<1.5
<0.6
<2.0
<2.4
<7.0
>2.5
<4.0
<2.5
>80
>43
>26
<22
<15
<25
<29
<31
>45
>40
<22
–
–
–
–
cm
MIN & MAX RATINGS
is calculated by assuming no output saturation.
is defined as the voltage at the non-inverting
i
, the input impedance setting resistor; bias
L
= 100Ω, R
+25°C
+25°C
<-150
>145
<100
<125
<200
>200
>±11
<0.3
<0.3
<0.6
<2.0
<2.3
<6.5
>2.5
<-47
<-47
<2.0
<2.5
>80
>43
>26
<17
<10
<25
<21
<15
>45
>40
<22
–
–
–
–
i
< (V
f
CC
= 250Ω; unless specified)
+125°C
/A
+85°C
<-150
>120
<100
<125
<200
>400
>±11
<0.6
<0.8
<1.0
<2.0
<2.7
<6.5
>1.8
<-47
<-47
<4.5
< 35
<2.5
>60
>43
>26
<22
<15
<25
<31
>45
>40
<22
v
)/24µA.
–
–
–
–
REV. 1A February 2001
dBm(1Hz) SNF
UNITS
µVrms
µV/°C
nA/°C
nA/°C
Ω, nH
MHz
MHz
V/ns
dBc
dBc
mV
mA
dB
dB
dB
dB
dB
µA
µA
dB
dB
kΩ
pF
ns
ns
ns
ns
ns
ns
%
V
°
±5V to ±15V
±(|V
CMRR
±1 to ±5
SSBW
FPBW
GFPH
PSRR
CC
GFPL
DVIO
DIBN
SYM
KH231
GFR
±75mA
LPD
RINI
RIIN
TRS
TRL
TSP
HD2
HD3
DIBI
INV
VIO
IBN
ICC
RIN
CIN
GD
OR
RO
OS
SR
VO
TS
IBI
| -5)V