ao4401 Alpha & Omega Semiconductor, ao4401 Datasheet

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ao4401

Manufacturer Part Number
ao4401
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4401
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4401 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
AO4401
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
S
S
S
G
B
T
T
T
T
Top View
A
A
A
A
SOIC-8
=25°C
=70°C
=25°C
=70°C
, low gate charge and
C
A
A
A
=25°C unless otherwise noted
D
D
D
D
Steady-State
Steady-State
t ^ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
G
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
TJA
TJL
= -6.1 A
(V) = -30V
< 46m: (V
< 61m: (V
< 117m: (V
D
S
Maximum
-55 to 150
±12
-6.1
-5.1
Typ
-30
-60
2.1
31
59
16
3
GS
GS
GS
= -10V)
= -4.5V)
= -2.5V)
Max
40
75
24
July 2001
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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ao4401 Summary of contents

Page 1

... AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View ...

Page 2

... AO4401 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V -4. (Volts) DS Fig 1: On-Region Characteristics 120 100 V =-2. 0.00 2.00 4.00 -I (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 130 110 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd ...

Page 4

... AO4401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 0.1s 1.0 1s 10s 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

Page 5

... AOS LOGO PARTN - PART NUMBER CODE FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE PART NO. CODE AO4400 4400 AO4800 4800 AO4401 4401 AO4801 4801 SO-8 Package Data DIMENSIONS IN MILLIMETERS SYMBOLS MIN NOM A 1.45 1.50 A1 0.00 A2 1. ...

Page 6

ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data ...

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