ao4444l Alpha & Omega Semiconductor, ao4444l Datasheet

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ao4444l

Manufacturer Part Number
ao4444l
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4444L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4444 uses advanced trench technology to
provide excellent R
and ultra-low gate resistance. This device is ideally
suited for use as a low side switch in 12V buck
converters. Standard Product AO4444 is Pb-free
(meets ROHS & Sony 259 specifications). AO4444L
is a Green Product ordering option. AO4444 and
AO4444L are electrically identical.
AO4444
N-Channel Enhancement Mode Field Effect Transistor
S
S
S
G
A
SOIC-8
DS(ON)
D
D
D
D
B
T
T
T
T
A
A
A
A
, body diode characteristics
=25°C
=70°C
=25°C
=70°C
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G
Symbol
Features
V
I
R
R
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJL
= 20A (V
D
S
(V) = 30V
< 5.5mΩ (V
< 7.5mΩ (V
Maximum
-55 to 150
GS
±20
Typ
2.1
30
20
17
80
31
59
16
3
= 10V)
GS
GS
= 10V)
= 4.5V)
Max
40
75
24
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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ao4444l Summary of contents

Page 1

... DS(ON) and ultra-low gate resistance. This device is ideally suited for use as a low side switch in 12V buck converters. Standard Product AO4444 is Pb-free (meets ROHS & Sony 259 specifications). AO4444L is a Green Product ordering option. AO4444 and AO4444L are electrically identical ...

Page 2

AO4444 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...

Page 3

AO4444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V (Volts) DS Fig 1: On-Region Characteristics 8 V =4. =10V 3 ...

Page 4

AO4444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =20A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10ms 10.0 0.1s 1s 10s DC ...

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