ao4494l Alpha & Omega Semiconductor, ao4494l Datasheet - Page 2

• Manufacturer Part Number: ao4494l
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Alpha & Omega Semiconductor

AO4494L
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A. The value of R
Power dissipation P
on the user's specific board design.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
Rev0: Sept 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
J
=25°C.
θJA
is the sum of the thermal impedence from junction to case R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
DSM
is measured with the device mounted on 1in
is based on R
D
is based on T
Parameter
J
=25°C unless otherwise noted)
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=18A, dI/dt=500A/µs
=18A, dI/dt=500A/µs
J(MAX)
=1A,V
GEN
=250µA, V
FR-4 board with 2oz. Copper, in a still air environment with T
=30V, V
=0V, V
=V
=5V, I
=10V, V
=10V, I
=4.5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=3Ω
=150°C. Ratings are based on low frequency and duty cycles to keep
GS
θJC
GS
I
D
D
=0V
and case to ambient.
GS
DS
DS
=18A
D
=250µA
D
GS
DS
DS
DS
=18A
GS
= ±20V
=16A
=15V, f=1MHz
=0V, f=1MHz
=0V
=5V
=15V, I
=15V, R
=0V
D
=18A
L
T
T
=0.83Ω,
J
J
=125°C
=125°C
1270
Min
0.8
130
170
1.5
4.2
4.7
30
87
24
12
22
19
1590
0.75
22.5
Typ
240
145
5.4
8.4
7.5
1.5
5.2
7.8
6.7
3.5
70
30
15
28
24
2
4
www.aosmd.com
±100
1900
A
Max
10.1
310
200
2.5
6.5
9.5
2.3
6.2
36
18
11
34
30
=25°C. The
1
5
1
3
Units
mΩ
mΩ
nC
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A