ao4494 Alpha & Omega Semiconductor, ao4494 Datasheet

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ao4494

Manufacturer Part Number
ao4494
Description
30v N-channel Mosfet
Manufacturer
Alpha & Omega Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4494
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
ao4494L/
Manufacturer:
AO
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO4494 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
applications.
General Description
D
D
D
Top View
D
DS(ON)
B
C
S
C
S
T
T
T
T
. This device is for PWM
SOIC-8
C
C
C
C
=25° C
=70° C
=25° C
=70° C
S
G
A
A D
A
Bottom View
=25° C unless otherwise noted
C
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
I
E
P
T
D
DM
AR
J
DS
GS
AR
D
, T
STG
Symbol
Product Summary
V
I
R
R
100% UIS Tested
100% R
D
R
R
DS
DS(ON)
DS(ON)
= 18A
JA
JL
(V) = 30V
< 9.5m
< 6.5m
Maximum
-55 to 150
g
Tested
±20
130
3.1
30
18
14
32
51
Typ
2
28
59
16
G
30V N-Channel MOSFET
(V
(V
(V
Max
40
75
24
GS
GS
GS
= 10V)
= 10V)
= 4.5V)
D
S
AO4494
www.aosmd.com
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A
A

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ao4494 Summary of contents

Page 1

... General Description The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is for PWM DS(ON) applications. SOIC-8 Top View Bottom View Absolute Maximum Ratings T A Parameter Drain-Source Voltage Gate-Source Voltage T =25° C ...

Page 2

... AO4494 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 10V 5V 120 6V 100 (Volts) DS Fig 1: On-Region Characteristics (Note (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note 25° ...

Page 4

... AO4494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V =18A (nC) g Figure 7: Gate-Charge Characteristics 90. 80.00 70.00 60.00 T =150°C A 50.00 40.00 30.00 20.00 0.000001 0.00001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability (Note C) 1000 100 10 1 0.00001 0.0001 Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F) Alpha & ...

Page 5

... AO4494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =40°C 0.1 0.01 0.001 0.00001 0.0001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse . Single Pulse 0.001 0.01 0.1 Pulse Width ( ...

Page 6

... AO4494 + VDC - Vgs Ig Vds Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms ...

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