ao4478l Alpha & Omega Semiconductor, ao4478l Datasheet

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ao4478l

Manufacturer Part Number
ao4478l
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4478L uses advanced trench technology to
provide excellent R
device is suitable for use as general puspose, PWM and
a load switch applications.
-RoHS Compliant
-Halogen Free
AO4478L
N-Channel Enhancement Mode Field Effect Transistor
D
B
C
DS(ON)
C
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
, low gate charge. This
C
A
AD
A
=25°C unless otherwise noted
SOIC-8
S
C
G
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
Iar
Ear
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
R
D
DS
DS(ON)
DS(ON)
θJA
θJL
= 9A (V
(V) = 30V
<19mΩ (V
<26mΩ (V
Maximum
-55 to 150
GS
Typ
±25
9.0
7.0
3.1
2.0
30
60
17
14
31
59
16
= 10V)
100% Rg Tested!
100% UIS Tested!
G
GS
GS
= 10V)
= 4.5V)
Max
40
75
24
D
S
Units
Units
°C/W
°C/W
°C/W
www.aosmd.com
mJ
°C
W
V
V
A

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ao4478l Summary of contents

Page 1

... AO4478L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4478L uses advanced trench technology to provide excellent R , low gate charge. This DS(ON) device is suitable for use as general puspose, PWM and a load switch applications. -RoHS Compliant -Halogen Free D Absolute Maximum Ratings T =25°C unless otherwise noted ...

Page 2

... AO4478L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4478L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10V (Volts) DS Figure 1: On-Region Characteristics(Note =4. =10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note 125°C 30 25°C ...

Page 4

... AO4478L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V = (nC) g Figure 7: Gate-Charge Characteristics =25° =25° =150° =150° 0.000001 0.00001 Time in avalanche, t Figure 9: Single Pulse Avalanche capability ...

Page 5

... AO4478L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =75°C/W θJA 1 0.1 0.01 0.001 0.00001 0.0001 Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .Z .R θJA θJA Single Pulse 0.001 0.01 0.1 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note ...

Page 6

VDC - Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Rg Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & W aveform Vgs 10V + Vds ...

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