SPB80N06S-08_05 INFINEON [Infineon Technologies AG], SPB80N06S-08_05 Datasheet - Page 6

• Manufacturer Part Number: SPB80N06S-08_05
• Description: SIPMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.0
9 Typical Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
16
14
12
10
DS
=f(T
8
6
4
2
0
4
3
2
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=80 A; V
10
20
GS
V
T
=10 V
DS
j
60
20
Coss
[°C]
Ciss
Crss
[V]
100
30
140
180
40
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
=f(T
SD
4
3
2
1
-60
)
0
j
); V
D
j
0.2
-20
GS
=V
SPI80N06S-08, SPP80N06S-08
175 °C
0.4
DS
20
µA 240
0.6
V
T
SD
j
60
[°C]
[V]
0.8
µA 1200
25 °C
SPB80N06S-08
100
1
140
2005-06-28
1.2
180
1.4