A400CB10RC AMD [Advanced Micro Devices], A400CB10RC Datasheet - Page 36

• Manufacturer Part Number: A400CB10RC
• Description: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
Temporary Sector Unprotect
34
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector.
JEDEC
WE#
DQ6
DQ2
Parameter
RESET#
RY/BY#
Embedded
Erasing
WE#
t
Enter
CE#
t
Std
VIDR
RSP
RESET# Setup Time for Temporary Sector
Unprotect
V
10 V
0 or 1.8 V
ID
Erase
Rise and Fall Time
Suspend
Erase
t
VIDR
Erase Suspend
Description
Figure 22. Temporary Sector Unprotect
Read
t
RSP
D A T A
Suspend Program
Figure 21. DQ2 vs. DQ6
Enter Erase
Timing Diagram
Am29SL400C
Program or Erase Command Sequence
S H E E T
Suspend
Program
Erase
Min
Min
Erase Suspend
Read
All Speed Options
Resume
Erase
Am29SL400C_00_A6 January 23, 2007
500
4
t
Erase
VIDR
0 or 1.8 V
Complete
Erase
Unit
ns
µs