A400CB10RC AMD [Advanced Micro Devices], A400CB10RC Datasheet - Page 39

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A400CB10RC

Manufacturer Part Number
A400CB10RC
Description
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
AC CHARACTERISTICS
January 23, 2007 Am29SL400C_00_A6
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written, D
2. Figure indicates the last two bus cycles of command sequence.
3. Word mode address used as an example.
Addresses
RESET#
RY/BY#
WE#
Data
OE#
CE#
t
RH
555 for program
2AA for erase
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
Figure 24. Alternate CE# Controlled
t
t
t
DS
PA for program
SA for sector erase
555 for chip erase
CP
CPH
t
AS
t
DH
D A T A
Write Operation Timings
t
AH
Am29SL400C
PD for program
30 for sector erase
10 for chip erase
t
BUSY
S H E E T
t
WHWH1 or 2
Data# Polling
OUT
= data written
DQ7#
PA
D
OUT
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