PMEG6030ETP NXP [NXP Semiconductors], PMEG6030ETP Datasheet - Page 3

• Manufacturer Part Number: PMEG6030ETP
• Description: High-temperature 60 V, 3 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
6. Thermal characteristics
Table 6.
PMEG6030ETP
Product data sheet
Symbol
Symbol
Fig. 1.
P
T
T
T
R
R
j
amb
stg
tot
th(j-a)
th(j-sp)
Z
(K/W)
th(j-a)
10
10
10
10
- 1
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
- 3
Thermal characteristics
duty cycle =
0.25
0.02
0.5
0.1
1
0
Parameter
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
0.75
0.33
0.05
0.01
0.2
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
10
- 2
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on a ceramic PCB, Al
Soldering point of cathode tab.
Conditions
All information provided in this document is subject to legal disclaimers.
in free air
R
10
are a significant part of the total power losses.
- 1
Conditions
T
amb
15 October 2012
≤ 25 °C
1
High-temperature 60 V, 3 A Schottky barrier rectifier
2
O
3
, standard footprint.
10
[1][2]
[1][3]
[1][4]
[5]
2
O
3
, standard footprint.
Min
[2]
[3]
[1]
-
-
-
-
10
PMEG6030ETP
2
Min
Typ
-
-
-
-
-55
-65
-
-
-
-
t
p
© NXP B.V. 2012. All rights reserved
(s)
006aab666
Max
Max
750
1250
2500
175
175
175
200
120
60
12
10
3
2
2
.
.
Unit
Unit
mW
mW
mW
°C
°C
°C
K/W
K/W
K/W
K/W
3 / 14