PMEG6030ETP NXP [NXP Semiconductors], PMEG6030ETP Datasheet - Page 7

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PMEG6030ETP

Manufacturer Part Number
PMEG6030ETP
Description
High-temperature 60 V, 3 A Schottky barrier rectifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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NXP Semiconductors
PMEG6030ETP
Product data sheet
Fig. 8.
Fig. 10. Average reverse power dissipation as a
P
P
R(AV)
(W)
R(AV)
(W)
0.25
0.20
0.15
0.10
0.05
2.5
2.0
1.5
1.0
0.5
0
0
T
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
T
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
function of reverse voltage; typical values
0
0
j
j
= 150 °C
= 85 °C
20
20
(1)
40
40
(2)
(4)
V
V
All information provided in this document is subject to legal disclaimers.
R
R
006aad144
006aad158
(1)
(V)
(V)
(3)
(3)
(2)
(4)
60
60
15 October 2012
High-temperature 60 V, 3 A Schottky barrier rectifier
Fig. 9.
Fig. 11. Average forward current as a function of
P
I
F(AV)
R(AV)
(W)
(A)
2.5
2.0
1.5
1.0
0.5
4.5
3.0
1.5
0
0
T
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
ambient temperature; typical values
0
0
j
j
= 125 °C
(1)
(2)
(3)
(4)
= 175 °C
50
20
100
PMEG6030ETP
40
150
© NXP B.V. 2012. All rights reserved
(4)
V
T
R
amb
006aad157
006aad145
(V)
(3)
(°C)
(1)
(2)
200
60
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