PMEG6030ETP NXP [NXP Semiconductors], PMEG6030ETP Datasheet - Page 5

• Manufacturer Part Number: PMEG6030ETP
• Description: High-temperature 60 V, 3 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
PMEG6030ETP
Product data sheet
Symbol
I
C
t
V
R
rr
FRM
d
Parameter
reverse current
diode capacitance
reverse recovery time
peak forward recovery
voltage
Conditions
All information provided in this document is subject to legal disclaimers.
I
I
I
I
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
V
I
T
I
F
F
F
F
F
F
j
R
R
R
R
R
R
R
= 3 A; T
= 3 A; T
= 3 A; T
= 3 A; T
= 0.5 A; I
= 1 A; dI
= 25 °C
= 5 V; T
= 10 V; T
= 60 V; T
= 60 V; T
= 60 V; T
= 1 V; f = 1 MHz; T
= 10 V; f = 1 MHz; T
j
j
j
j
F
= -40 °C
= 125 °C
= 150 °C
= 175 °C
j
R
/dt = 40 A/µs; T
15 October 2012
= 25 °C; t
j
j
j
j
= 0.5 A; I
= 25 °C; t
= 25 °C; t
= -40 °C; t
= 125 °C; t
High-temperature 60 V, 3 A Schottky barrier rectifier
p
j
R(meas)
p
p
= 25 °C
≤ 300 µs;
j
p
p
≤ 300 µs;
≤ 300 µs;
= 25 °C
≤ 300 µs;
≤ 300 µs;
j
= 25 °C
= 0.1 A;
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
PMEG6030ETP
Typ
510
405
390
370
4
5
80
0.5
45
360
120
12
425
© NXP B.V. 2012. All rights reserved
Max
590
480
460
450
-
-
200
10
150
-
-
-
-
Unit
mV
mV
mV
mV
µA
µA
µA
µA
mA
pF
pF
ns
mV
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