PMEG6030ETP NXP [NXP Semiconductors], PMEG6030ETP Datasheet - Page 6

no-image

PMEG6030ETP

Manufacturer Part Number
PMEG6030ETP
Description
High-temperature 60 V, 3 A Schottky barrier rectifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PMEG6030ETP
Quantity:
42 000
Part Number:
PMEG6030ETPX
0
NXP Semiconductors
PMEG6030ETP
Product data sheet
Fig. 4.
Fig. 6.
(pF)
(A)
C
I
10
10
10
10
F
700
d
600
500
400
300
200
100
10
-1
-2
-3
-4
1
0
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
0
j
j
j
j
j
j
(1)
(2)
(3)
0.1
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
0.2
amb
20
= 25 °C
(4)
0.3
(5)
0.4
(6)
40
0.5
V
All information provided in this document is subject to legal disclaimers.
0006aad141
R
V
0.6
006aab883
F
(V)
(V)
0.7
60
15 October 2012
High-temperature 60 V, 3 A Schottky barrier rectifier
Fig. 5.
Fig. 7.
(A)
I
P
R
F(AV)
(W)
10
10
10
10
10
10
10
10
10
10
2.0
1.8
1.2
0.8
0.4
-10
-1
-2
-3
-4
-5
-6
-7
-8
-9
0
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Reverse current as a function of reverse
voltage; typical values
T
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Average forward power dissipation as a
function of average forward current; typical
values
0
0
j
= 175 °C
(1)
j
j
j
j
j
j
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
1.5
20
(3)
(4)
(5)
(6)
(2)
PMEG6030ETP
3.0
40
(3)
I
F(AV)
© NXP B.V. 2012. All rights reserved
V
R
006aad142
006aad143
(V)
(A)
(4)
4.5
60
6 / 14

Related parts for PMEG6030ETP