PMEG6030ETP NXP [NXP Semiconductors], PMEG6030ETP Datasheet - Page 9

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PMEG6030ETP

Manufacturer Part Number
PMEG6030ETP
Description
High-temperature 60 V, 3 A Schottky barrier rectifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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8. Test information
PMEG6030ETP
Product data sheet
Fig. 15. Reverse recovery definition
Fig. 16. Forward recovery definition
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
I
I
F(AV)
RMS
I
I
R
F
defined as RMS current.
= I
V
I
M
F
F
× δ with I
All information provided in this document is subject to legal disclaimers.
M
P
defined as peak current, I
t
15 October 2012
p
t
rr
t
cy
High-temperature 60 V, 3 A Schottky barrier rectifier
duty cycle δ =
006aac658
t
t
t
cy
p
RMS
V
F
001aab912
= I
time
time
F(AV)
I
R(meas)
V
FRM
at DC, and I
006aad022
PMEG6030ETP
time
RMS
© NXP B.V. 2012. All rights reserved
= I
M
× √δ with
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