SPD30N03S2L-07_08 INFINEON [Infineon Technologies AG], SPD30N03S2L-07_08 Datasheet - Page 3

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SPD30N03S2L-07_08

Manufacturer Part Number
SPD30N03S2L-07_08
Description
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
.
I
I
V
t
Q
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
SD
iss
oss
rss
G
gs
gd
g
(plateau) V
rr
Page 3
T
V
V
di
V
I
V
f=1MHz
V
I
R
V
V
V
D
D
C
DS
GS
DD
G
DD
DD
GS
DD
GS
R
F
=30A
=15A,
=25°C
/dt=100A/µs
=15V, I
=3.6Ω
=0V, I
≥2*I
=0V, V
=0 to 10V
=15V, V
=24V, I
=24V, I
=24V, I
Conditions
D
*R
F
F =
DS
=30A
D
D
D
DS(on)max
GS
l
S
=30A
=30A,
=30A
=25V,
,
=10V,
,
min.
29
SPD30N03S2L-07 G
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1900
typ.
740
180
0.9
2.3
3.1
41
46
58
17
62
47
18
51
8
6
-
-
02-09-2008
max.
2530 pF
77.5
120
990
270
1.3
30
51
58
10
26
59
27
68
8
-
-
-
A
V
ns
nC
Unit
S
ns
nC
V

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