IPB70N04S4-06 INFINEON [Infineon Technologies AG], IPB70N04S4-06 Datasheet - Page 7

• Manufacturer Part Number: IPB70N04S4-06
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
150
125
100
75
50
25
10
0
9
8
7
6
5
4
3
2
1
0
25
0
j
)
gate
35 A
75 A
D
); I
17 A
DD
D
= 70 A pulsed
75
10
Q
T
gate
j
[°C]
[nC]
8 V
125
20
32 V
175
30
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
46
44
42
40
38
36
V
g (th)
g s(th)
-55
GS
= f(T
j
); I
Q
-15
g s
IPI70N04S4-06, IPP70N04S4-06
D
= 1 mA
25
Q
T
g
j
Q
[°C]
65
sw
Q
g d
IPB70N04S4-06
105
2010-04-13
145
Q
gate