BFN24_07 INFINEON [Infineon Technologies AG], BFN24_07 Datasheet - Page 2

• Manufacturer Part Number: BFN24_07
• Description: NPN Silicon High-Voltage Transistors
• Manufacturer: INFINEON [Infineon Technologies AG]

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
1
2
C
C
C
C
E
C
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
CB
CB
CB
EB
= 100 µA, I
= 1 mA, I
= 1 mA, I
= 100 µA, I
= 100 µA, I
= 1 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= 20 mA, I
= 20 mA, I
= 20 mA, I
= 5 V, I
= 200 V, I
= 250 V, I
= 200 V, I
= 250 V, I
B
B
C
CE
B
B
B
C
= 0 , BFN24
= 0 , BFN26
E
E
= 0
CE
CE
CE
E
E
E
E
= 2 mA, BFN24
= 2 mA, BFN26
= 2 mA
= 0 , BFN24
= 0 , BFN26
= 0
2)
= 10 V
= 0 , BFN24
= 0 , BFN26
= 0 , T
= 0 , T
thJA
= 10 V
= 10 V, BFN24
= 10 V, BFN26
please refer to Application Note Thermal Resistance
A
A
= 150 °C, BFN24
= 150 °C, BFN26
1)
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
R
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
min.
250
300
250
300
25
40
40
30
6
-
-
-
-
-
-
-
-
Values
Value
typ.
210
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFN24, BFN26
max.
100
0.1
0.1
0.4
0.5
0.9
20
20
2007-04-20
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
nA
-
V