SGP15N120_09 INFINEON [Infineon Technologies AG], SGP15N120_09 Datasheet - Page 4

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SGP15N120_09

Manufacturer Part Number
SGP15N120_09
Description
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Power Semiconductors
70A
60A
50A
40A
30A
20A
10A
200W
175W
150W
125W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
0A
75W
50W
25W
GE
j
j
10Hz
0W
≤ 150°C, D = 0.5, V
≤ 150°C)
= +15V/0V, R
25°C
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
,
I
c
CASE TEMPERATURE
G
T
T
= 33Ω)
C
C
=80°C
=110°C
75°C
1kHz
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
100A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
35A
30A
25A
20A
15A
10A
1A
5A
0A
GE
25°C
1V
≤ 15V, T
Figure 2. Safe operating area
(D = 0, T
V
CE
,
COLLECTOR
T
50°C
C
j
,
≤ 150°C)
C
10V
CASE TEMPERATURE
= 25°C, T
SGW15N120
75°C
SGP15N120
-
EMITTER VOLTAGE
100V
j
≤ 150°C)
100°C
Rev. 2.6
1000V
125°C
1ms
15
t
50
200
p
DC
=2
µ
Nov. 09
µ
s
µ
s
µ
s
s

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