BCR48PN_07 INFINEON [Infineon Technologies AG], BCR48PN_07 Datasheet
BCR48PN_07
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BCR48PN_07 Summary of contents
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NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN 47k , R = 47k 1 2 PNP 2.2k , ...
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Thermal Resistance 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics for NPN Type Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ ...
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Electrical Characteristics at T Parameter DC Characteristics for PNP Type Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector cutoff current ...
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NPN Type DC Current Gain (common emitter configuration -40 °C -25 °C 25 °C 85 °C 125 ° Input ...
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PNP Type DC Current Gain (common emitter configuration -40 ° -25 °C 25 °C 85 °C 125 ° Input ...
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Total power dissipation P 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load K 0.5 0.2 0.1 0.05 0.02 0 ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...